Epitaxial NaNbO3 thin films have been grown by pulsed laser deposition on cubic (00l) MgO substrate with epitaxial (La0.5Sr0.5)CoO3 buffer layer. Micro-Raman spectroscopy studies revealed that the ferroelectric Q phase (Pmc21, Z=4) is stable in a 250-nm-thick film in contrast to the antiferroelectric phase P (Pbma, Z=8) known to exist in the bulk single crystals and ceramics of undoped stoichiometric NaNbO3. Temperature-dependent Raman spectra indicate that the Q phase is stable over a wide temperature range (at least from 80 to 600 K), while the low-temperature ferroelectric rhombohedral phase N, typical for NaNbO3 single crystals, is not observed.
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Yuzyuk et al. (2010) studied this question.
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