Quasi‐2D perovskite memristors: From layered structures to advanced computing applications

Metal halide perovskites are promising active materials for memristive devices, as their soft ionic lattices and mixed ionic–electronic conduction enable resistance switching under external bias. In conventional bulk 3D perovskites, however, uncontrolled ion migration and poor environmental stability undermine switching reliability. Quasi‐2D layered perovskites provide additional structural degrees of freedom to mitigate these limitations through a multiple‐quantum‐well architecture, where hydrophobic organic interlayers can suppress leakage currents and spatially constrain ionic transport. Although quasi‐2D perovskites have been increasingly studied for memristive applications, most reviews discuss them within the broader context of halide perovskites, often extending mechanisms from 3D systems without adequately accounting for the distinct ionic and electronic transport pathways introduced by the layered structure. This review provides a systematic framework linking the layered structure of quasi‐2D perovskites, including phase type, layer thickness, spacer‐cation chemistry, and film orientation, to their resistive switching behavior and device performance. The major switching mechanisms are examined, and the roles of dimensional and interfacial engineering in enhancing reliability, energy efficiency, and analog conductance modulation are comprehensively assessed. Rather than treating ion migration solely as a drawback, this review highlights how controlled ionic motion in quasi‐2D perovskites can be harnessed for stable memristive functionality. Emerging applications in neuromorphic computing, optoelectronic sensing, and in‐memory architectures are discussed, together with key challenges that must be addressed for practical deployment.