Memory Cell Based on Crossed Nanowires

The design and calculations of basic characteristics of memory cell based on crossed nanowires with different cross-sections are presented. The device operation is possible if the transverse dimensions of the nanowires provide dimensional quantization of the electron energy in the working temperature values. In this case, the intersecting regions of nanowires with different cross-sections are the quantum wells for electrons. Tunneling of electrons between quantum wells controlled by applied voltage provides information recording. The write rate of cell can reach Pbytes/s =〖10〗^15 bytes/s.