Based on the direct structure determination of the silicide formed at room temperature from 1 monolayer of Ni deposited on Si(111) and from Ni coverages up to 5 monolayers, a model for silicide growth and interface formation is presented. The model forms a basis for understanding many of the photoemission, ion scattering, and microscopy results from this system.
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Comin et al. (1983) studied this question.
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