Electroluminescence in GaSb liquid-phase epitaxial diodes has been studied. Optical and electrical measurements were done between 65° and 300°K. Two emission bands are observed, which are both due to transitions between the conduction band and different acceptor levels. The peak photon energy of band I is stationary with applied voltage and is due to a thermal injection mechanism. The low-energy band II shifts with applied voltage and is described by theories of photon-assisted tunneling. It is demonstrated that for both emission bands the intensities and peak photon energies are directly related to the applied voltage.
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Gerard M. Blom (1971) studied this question.
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