A high band‐gap (~1.55 eV) chalcopyrite compound film (CuInGaS2) was synthesized by a precursor solution‐based coating method with an oxidation and a sulfurization heat treatment process. The film revealed two distinct morphologies: a densely packed bulk layer and a rough surface layer. We found that the rough surface is attributed to the formation of Ga deficient CuInGaS2crystallites. Because of the high band‐gap optical property of the CuInGaS2absorber film, a solar cell device with this film showed a relatively high open circuit voltage (~787 mV) with a power conversion efficiency of 8.28% under standard irradiation conditions.
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Lee et al. (2013) studied this question.
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