High power operation of a nitrogen doped, vanadium compensated, 6H-SiC extrinsic photoconductive switch

We report the high power operation of nitrogen doped, vanadium compensated, 6H-SiC, extrinsic photoconductive switches with improved vanadium and nitrogen dopant density. Photoconductive switching tests are performed on 1 mm thick, m-plane, switch substrates at switch voltage and currents up to 17 kV and 1.5 kA, respectively. Sub-ohm minimum switch on resistance is achieved for peak optical intensities ≥35 MW/cm2 at 532 nm applied to the switch facet. A reduction of greater than nine orders of magnitude is observed in switch material resistivity between dark and illuminated states.