Electrical insulation properties of sputter‐deposited SiO2, Si3N4 and Al2O3 films at room temperature and 400 °C

In this paper the breakdown field strength and resistivity of sputter‐deposited Al2O3, SiO2 and Si3N4 layers are investigated in the temperature range between room temperature and 400 °C. All the investigated layers showed excellent insulation properties, even at elevated sample temperature. One example of industrial application is the deposition of electrical insulation layers onto the membranes of pressure sensors using cluster type sputter equipment