Yellow–green lasing operations of ZnCdTe/MgZnSeTe laser diodes on ZnTe substrates

ZnCdTe/MgZnSeTe laser diodes (LDs) were fabricated on ZnTe substrates by molecular beam epitaxy. The LDs were characterized under single short pulse current injections at low temperature. Yellow–green single‐mode lasing emissions at 564 nm were successfully obtained, for the first time. The threshold current density (J th) at 100 K was 2.8 kA/cm2. The full width at half maximum value of the lasing emission peak was 1.1 meV (0.29 nm). From the temperature dependency of the J th, it was confirmed that the lasing operations were obtained up to 170 K. The characteristic temperature value was estimated to be 228 K. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)