N-channel Ge MOSFETs are fabricated with the use of a double-layer gate oxide consisting of electron beam evaporated SiO2 over a native GeO2 oxide, formed by highpressure thermal oxidation. Interface properties of the MOS structure, determined by capacitance/voltage and mobility measurements, are shown to be suitable for FET devices.
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Crisman et al. (1987) studied this question.
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