Modeling spin-orbit torque driven magnetization dynamics in emerging magnetoresistive devices: a finite element method approach

We present a versatile three-dimensional finite element simulation framework that couples a charge and spin drift-diffusion formalism, extended to include interfacial spin-orbit coupling, with the Landau-Lifshitz-Gilbert equation. The resulting solver provides an efficient and accurate platform for modeling magnetization dynamics in emerging magnetoresistive devices such as SOT-MRAM. Its capabilities are demonstrated through simulations of current-induced magnetization switching with spin-orbit torques in a representative SOT-MRAM cell.