Doping-regulated Schottky interfaces for built-in electric field enhanced electromagnetic wave absorption

In recent years, heteroatom doping and the introduction of built-in electric fields (BIEF) have emerged as key strategies for enhancing electromagnetic wave (EW) absorption. BIEF facilitates the redistribution of discrete charges at material interfaces, inducing spatial charge polarization, while heteroatom doping further modulates electron mobility and introduces internal defects. Together, these effects synergistically enhance the material's EW absorption properties. In this study, a stable Mott-Schottky heterojunction was constructed by coating MoS 2 onto the surface of carbon fiber (CF) via a combination of sintering and a simple hydrothermal reaction. Three variations were subsequently prepared to investigate the effects of heteroatom doping and BIEF: MoS 2 -coated CF (CM), N-MoS 2 -coated CF (CNM), and N-MoS 2 -coated P-CF (PCNM). The influence of heteroatom doping on the absorption properties of materials with an internal electric field, as well as the effect of N-MoS 2 content on EW absorption performance, was systematically examined. Notably, the PCNM-1 sample exhibited exceptional EW absorption performance, which can be attributed to the synergistic interaction between heteroatom doping and BIEF, combined with the optimized material composition. Specifically, PCNM-1 achieved an optimal reflection loss (RL) of −45.76 dB at 17.52 GHz with a thickness of 1.2 mm, alongside an effective absorption bandwidth (EAB) of 4.0 GHz. Radar cross-section (RCS) simulations further demonstrated its remarkable EW stealth capability. Overall, this study provides valuable insights into the rational design of advanced EW absorbers by leveraging the synergistic effects of heteroatom doping and BIEFs, offering a promising approach for developing high-performance, compositionally tunable EW absorption materials.