Cation doping has been widely explored to mitigate disorder in kesterite Cu 2 ZnSn(S, Se) 4 photovoltaics, yet further efficiency gains are hindered by the inability to simultaneously suppress deep‐level defect clusters, enhance carrier concentration, and preserve bulk transport properties. Here, we report a Li‐Al co‐doping strategy that introduces synergistic passivation effects (SPEs) within the absorber. Unlike simple additive doping, the co‐substitution of Li + and Al 3+ at Zn 2+ sites with Li preferentially occupying Zn sites in the presence of Al, as confirmed by first‐principles density functional theory (DFT) open‐circuit voltage calculations, enables a unique charge self‐compensation and lattice strain balance mechanism, which collectively reshapes the defect landscape. This approach effectively suppresses detrimental [2Cu Zn +Sn Zn ] clusters while promoting beneficial [V Cu +Zn Cu ] clusters, and concurrently increases carrier concentration and built‐in potential. Comprehensive spectroscopic and electrical characterizations reveal that the SPEs originate from energetically favorable defect complexes such as [Li Zn +Al Zn ], enabling atomic‐scale tuning of recombination dynamics. As a result, the champion device achieves a notable efficiency of 15.49% with a high open‐circuit voltage ( V OC ) of 0.608 V ( V OC,def = 0.286 V), and exceptional operational stability over 3910 h. This work establishes a generalizable materials design principle, i.e., engineering synergistic charge compensation between complementary dopants for overcoming voltage deficits in multi‐cation semiconductors beyond kesterites.
No takes yet. Share an insight, caveat, or question.
Meng et al. (2026) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: