Ac conductivity and modulated dielectric parameters of SiO2, Cd3(PO4)2, and CNT doped thermoplastic polyurethane films synthesized for optoelectronic applications

The current investigation details the fabrication alongside subsequent physical evaluation concerning thermoplastic polyurethane (TPU) matrices modified using discrete cadmium phosphate, silicon dioxide, and carbon nanotube dispersants. Thermal decomposition assessments revealed substantial high-temperature endurance while crystallite dimensions expanded progressively, growing from 53 nm for initial phosphate-doped variants toward a maximized 80 nm following complete tubular carbon integration. Spectroscopic vibrational profiling confirmed undisturbed intrinsic structures. Furthermore, fundamental optical transition energies validated systematic narrowing, decreasing from 4.0 eV to 3.5 eV characterizing CNT-SiO 2 -Cd 3 (PO 4 ) 2 -TPU composite. Electrical charge storage evaluations in CNT-SiO 2 -Cd 3 (PO 4 ) 2 -TPU composite demonstrated an exceptional real permittivity surpassing 600 measured at 0.1 Hz. Simultaneously, dynamic alternating current acquired conductivity attained 3 × 10 −6 S/cm. These obtained outcomes highlight the synthesized CNT-SiO 2 -Cd 3 (PO 4 ) 2 -TPU system capabilities regarding expanded lattice parameters, narrowed forbidden bands, and tremendously amplified capacitive behaviors and electron mobility. This strongly supports potential utilization across advanced optoelectronic technologies.