Loss characteristics of silicon substrate with different resistivities

In the design of high‐speed and high frequency IC's, the influence of the substrate on the circuit performance must be considered carefully. This work investigates the loss characteristic of silicon substrate with different resistivities and distinguishes theoretically and experimentally the dielectric losses into the intrinsic loss of silicon (tan δD) and the extrinsic substrate leakage loss (tan δL) caused by the finite conductivity of the substrate. The dielectric relaxation (cut off) frequency as a function of silicon substrate resistivity are calculated as considering the conditions of substrate noise isolation and RF passive device design.