1-μm-wide Al lines were passivated at 300 °C and annealed at 400 °C. The thermal stress induced growth of individual voids was monitored during room-temperature storage. The growth kinetics of voids are analyzed in terms of a grain boundary diffusion controlled model.
No takes yet. Share an insight, caveat, or question.
rgesen et al. (1991) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: