Epitaxial growth of diamond on iridium thin films was performed by direct-current plasma chemical vapor deposition with ion irradiation pretreatment of the substrate. Pyramidal epitaxial diamond particles with a number density of ∼10 8 cm -2 were grown on the iridium film. The epitaxial relation is written as (100) diamond //(100) iridium and [001] diamond //[001] iridium . Tilting of the epitaxial relation, as occasionally observed for diamond on silicon or beta silicon carbide, is scarcely observed. Erosion,as observed for diamond on nickel substrates, is not observed. The effect of the ion irradiation of the substrate is discussed briefly.
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Ohtsuka et al. (1996) studied this question.
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