The emission spectra from sulfurized p-InP annealed at temperatures below 300 °C are compared with those from untreated samples annealed under the same conditions. The unsulfurized samples show a VP related emission band at 1.14 eV whose intensity increases linearly with annealing temperature. The sulfurized samples exhibit an emission band at 0.94 eV attributed to a SP deep level. Both bands disappear when a layer of 20 Å is chemically removed. This shows that both VP and SP formation is limited to a few atomic surface layers.
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Leonelli et al. (1990) studied this question.
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