Physical Properties of Highly Conformal TiN Thin films Grown by Atomic Layer Deposition

The physical properties of TiN films deposited by the atomic layer deposition (ALD) technique, using TiCl 4 and NH 3 as the precursors have been investigated. The deposition rate of the TiN film is constant and moderately high (∼0.6 Å per cycle) under optimum deposition conditions. The film resistivity is significantly low (∼200 µΩcm). The X-ray diffraction (XRD) analytical results indicate the polycrystalline nature of the TiN films with a (111) preferred orientation. The XPS and AES analysis results establish that the Cl impurity concentration in the TiN films is lower than 1 at.% and the ratio of Ti to N by atomic concentration in the TiN films is approximately 1:1. SEM observation also revealed that the step coverage of the TiN films with trenches (the aspect ratio being 10:1) is excellent. Conformality of 100% is observed for both the side/bottom and the side/top sections.