Photoluminescence spectra and decay kinetics within 10–350 K were measured in the Bi-doped Y3Ga5O12 single crystal prepared by the micro-pulling-down technique. Temperature dependences of the decay times and the integrated emission intensities obtained from the experiment were simulated using a phenomenological two-excited-state-level model. The model provided quantitative parameters of the involved excited state levels of the Bi3+ luminescence centre in this host. The results are discussed in the light of already published data obtained for other Bi-doped compounds. The influence of the defects and structural irregularities of the host on the Bi3+ emission characteristics is discussed as well.
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Nikl et al. (2005) studied this question.
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