Development of a large high-performance 2-D array of GaAs-AlGaAs multiple quantum-well modulators

We present the development of an ultrafast two-dimensional (288 × 132 elements) reflection modulator array based on GaAs-AlGaAs multiple quantum-wells embedded in an asymmetric Fabry-Perot structure. The array has low operation voltage (< 4 V), low insertion loss, and high contrast ratio at /spl sim/846 nm. This array was hybridized to 0.25 μm complementary metal-oxide-semiconductor driver providing 256 gray levels resolution at frame rate of 50 kHz (driver limited). Major progress in reducing the severe nonuniformity problem of the cavity resonance wavelength in such devices to less than 3.4 nm variation across a 4-in wafer was achieved.