Monolithically Integrated Deep Ultraviolet Emitters With Electrode‐Engineered Light Polarization

Implementing light polarization control has enabled the realization of numerous fascinating optical phenomena and functionalities in both scientific and industrial applications. However, achieving precise and deterministic manipulation of light polarization in shorter wavelength, e.g., deep ultraviolet (DUV) band (λ < 280 nm) remains challenging. Herein, we demonstrate, for the first time, electrode‐engineered polarization control of DUV emission directly from a light emitter, without involving bulky external optics or complex metasurface or plasmonic architectures. Simply by strategically engineering the p‐type electrode geometry from circular, micro‐ring to narrow‐ring configurations, the relative contributions of transverse‐magnetic (TM) and transverse‐electric (TE) emission can be systematically controlled, yielding well‐separated TM to TE intensity ratios of 0.36, 0.54, and 0.77, respectively. Strikingly, their −3 dB bandwidths are 261, 298, and 300 MHz, respectively, with corresponding high‐speed data rates of 2.49, 2.63, and 2.87 Gbps can be achieved. Building upon this controllable polarization and modulation landscape, we further demonstrate polarization‐assisted multiplexing and physical‐layer secure optical communication by leveraging device‐specific polarization states as intrinsic optical fingerprints. These results establish a feasible and scalable approach toward the direct control over the DUV‐light polarization for high‐speed and secure ultraviolet photonic systems.