Electrical deactivation of arsenic in highly doped silicon has been studied using the positron-beam technique. Direct experimental evidence linking the formation of arsenic-vacancy complexes (i.e., Asn-v) to the deactivation process is reported. The average number of arsenic atoms per complex, n̄≳2, was determined by comparing the observed complex concentrations with those of the deactivated arsenic inferred from Hall-effect measurements.
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Lawther et al. (1995) studied this question.
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