Coupled piezoelectric and thermoelectric response of an InAs hollow spherical quantum dot under temperature and [111] uniaxial stress

This work notably does not take uniaxial stress as a general tuning parameter but tests its applicability to the actual problem of an InAs hollow spherical quantum dot (HSQD) with the electrostatics due to two interfaces and retaining the discrete nature of the confined spectrum. We relate the model to canonical bulk InAs band parameters, hollow-shell confinement, electron–heavy-hole–light-hole statistics, and finite-level Kubo–Greenwood/Onsager transport as a function of resonant-energy range. Measured over 200–500 K; 0–5 kbar; and two donor densities. For N D = 7.551 × 10 15 cm -3 , the largest conductivity, power factor, and thermoelectric figure of merit are 117.94 S m -1 , 3.599 × 10 -6 W m -1 K -2 , and ZT = 1.111 × 10 -4 , respectively, all at 500 K and zero applied stress. We find that increasing [111] stress reduces the band gap and electron effective mass, but is also accompanied by a reduction in interlevel electrical response, thus yielding no stress-enhanced thermoelectric optimum within the search grid. Minority holes become measurable at high temperature (p/n = 0.0584 at the optimum), yet their contribution to the electrical conductivity is still below a few percent of its overall value there. This means that the numerical trends then designate temperature as the main driver of thermoelectric response and [111] stress primarily suppresses σ, PF, and ZT through control. Since the absolute magnitudes depend on the lattice-thermal background that is adopted and on what kind of lifetime one extracts from mobility, those values are regarded as mechanistic predictions for the confined shell, not actual device efficiencies.