Temperature‐Dependent Spectral and Electrical Characteristics of THz Metasurfaces Integrated With Patterned GaN Thin Films

Terahertz (THz) metasurfaces offer strong electromagnetic modulation, yet efficient thermal tunability remains challenging. Here, we investigate the heating‐dependent THz response of metasurfaces integrated with strip‐patterned, square‐patterned, and continuous GaN thin films. The strip‐patterned and continuous samples were characterized from 33°C to 172°C, whereas the square‐patterned sample was measured from 33°C to 130°C. Within the common comparison range up to 130°C, the strip‐patterned configuration exhibited the strongest overall transmittance modulation. These results indicate that GaN pattern geometry modifies the effective electromagnetic loading and interaction with localized resonant fields. When heating was extended to 172°C, the strip‐patterned metasurface exhibited the largest resonance transmittance contrast variation of 11.12%, a phase‐shift range from −334° to 8°, and a maximum transmittance modulation depth of 49.15%. These findings demonstrate semiconductor patterning as an effective strategy for enhancing thermally driven THz modulation.