Study and Optimization of the p-type Cu₂O/β -Ga₂O₃ P-N Heterojunction Power Diode via TCAD Simulation

We have systematically investigated the effect of the variation in the doping concentration and thickness of the Cu₂O layer on the electrical characteristics of the p-type Cu₂O/n-type Ga₂O₃ heterojunction p-n diode. In particular, the effect of the doping concentration and thickness of Cu₂O was explored in order to enhance the breakdown voltage of the p-type Cu₂O/n-type Ga₂O₃ heterojunction p-n diode. The on-resistance of the device was noted to decrease from 41.2 MΩ·cm² to 0.815 mΩ·cm² with increasing electron affinity of the Cu₂O layer. The breakdown voltage of the device increased with increasing doping concentration and increase in thickness of the Cu₂O layer until the respective values reached to 1 × 1018 cm−3 and 200 nm with the breakdown voltage of the p-n diode reaching 1500 V. The increase in breakdown voltage of the p-n diode with thickness of Cu₂O layer is attributed to the fact that a thicker layer could accommodate a wider depletion region. While the increase in breakdown voltage with doping concentration of p-type Cu₂O is due to widening of the depletion width in the drift layer. An electric field distribution under the anode edges for the p-type Cu₂O/n-type Ga₂O₃ heterojunction p-n diode has been presented and discussed in detail through technology computer aided design (TCAD) simulation. The results of this work provide a vital insight for the design and performance enhancement of the next-generation Ga₂O₃-based high-power devices.