Terahertz (THz) photodetectors operating at room temperature are critical for next-generation wireless communication and security screening, yet achieving simultaneously high responsivity, low noise, and scalable fabrication remains challenging. Here, we report a THz photodetector integrating an H-shaped plasmonic metasurface with sputtered NbGeSb semimetal thin films. The metasurface supports localized surface plasmon resonance (LSPR) for deep subwavelength field confinement, while the semimetal NbGeSb film provides efficient transport channels for photocarrier collection. The device is fabricated by sub-pixel microscanning 3D printing combined with magnetron sputtering, enabling a route that is in principle compatible with large-area processing. At 0.1 THz and 7.62 V bias, the detector achieves a responsivity of 30.10 A/W, a noise equivalent power (NEP) of 15.66 pW·Hz −1/2 , and a specific detectivity D* of 2.22 × 10 10 cm·Hz 1/2 /W. Under combined optical (445 nm, 50 mW) and weak magnetic (0.145 mT) modulation, the responsivity and NEP are tuned to 32.37 A/W and 14.98 pW·Hz −1/2 . The combination of plasmonic field enhancement and the semimetal film transport, together with the fabrication route and a 10%–90% rise time of 79 ms suited to imaging and slow-modulation scenarios, makes this platform a promising candidate for terahertz sensing and security screening applications.
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jiang et al. (2026) studied this question.