Zero-field spin-wave networks with integrated non-volatile memory

Magnonic circuits that use spin waves for nanoscale signal processing and computing are widely regarded as a promising alternative to traditional semiconductor electronics. However, a key missing component of this information nanotechnology is a feasible approach for the integration of memory directly into spin-wave devices. Here we propose a strategy for the implementation of built-in non-volatile memory, which uses the static magnetization states of waveguiding elements within a magnonic network fabricated from a low-loss magnetic insulator and operating at zero bias magnetic field. We show that switching the magnetization direction in these elements enables efficient control over spin-wave propagation paths. Furthermore, we suggest an approach to achieve low-energy selective magnetization switching in such systems. Our results open new possibilities for the realization of advanced, self-contained magnonic nano-circuits.