1.55 μ m emission from InAs∕GaAs quantum dots grown by metal organic chemical vapor deposition via antimony incorporation

The authors report a fabrication technique for redshifting the emission wavelength of InAs quantum dots (QDs) grown on GaAs substrate by metal organic chemical vapor deposition. By introducing an antimony irradiation step during the InAs QD growth, the authors have achieved ground-state emission at 1.55μm (and beyond) from InAs∕GaAs QDs capped by an In0.24Ga0.76As strain-reducing layer (SRL) at room temperature (RT). Photoluminescence intensity is strongly enhanced (×100) at RT compared to Sb-free QDs capped by a higher In-content SRL in which ground-state emission saturates at wavelengths shorter than 1.51μm.