Characterization and Luminescence Properties of Y2Si3O3N4:Ce3+Phosphor for White Light-Emitting-Diode

Single-phased Y 2− x Si 3 O 3 N 4 : x Ce 3+ (0 < x ≤ 0.4) phosphors were prepared by solid-state reaction method in flowing hydrogen and nitrogen mixture gas. The X-ray diffraction analysis indicated that Ce 3+ ions had been incorporated into the host lattice of Y 2 Si 3 O 3 N 4 , and the optimized doping concentration was 3 mol%. Strong absorption peaking at about 397 nm was observed on the excitation spectra for the Ce 3+ -doped phosphors, which matched well with the current near-ultraviolet (NUV) InGaN/GaN light emitting diodes (LEDs). The Y 2− x Ce x Si 3 O 3 N 4 samples showed a broad emission band with peak wavelength ranging from 465 to 500 nm, which was attributed to the 5d–4f transition of Ce 3+ . Energy transfer between Ce 3+ ions was discussed and evidenced in detail, which resulted in redshift of the emission and concentration quenching. To understand the thermal quenching behavior, the temperature-dependent luminescence of Y 1.94 Ce 0.06 Si 3 O 3 N 4 was investigated. Bluish-green LEDs was fabricated by integrating a near-ultraviolet (NUV) chip with Y 1.94 Si 3 O 3 N 4 :0.06Ce 3+ phosphor as a single package.