Minority hole mobilities in highly-doped n-type silicon are determined by electron-beam-induced current measurements. They are used in conjunction with existing data taken from the literature to derive an empirical expression for the minority hole moblility as a function of majority-carrier density 1014cm-3≤ ND≤ cm-3. It is anticipated that this empirical fit will be valuable in device modeling.
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Burk et al. (1984) studied this question.
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