Complementary Metal-Oxide Semiconductor-Compatible Phototransistor Platform for Neuromorphic Broadband Vision

Photodetection and neuromorphic computing promises sensing at the edge, yet most optoelectronic synapses lack spectral breadth or scalable silicon integration. Here we report a dual-gate synaptic transistor integrating colloidal quantum dots (CQDs) with a silicon-on-insulator (SOI) channel in a complementary metal-oxide semiconductor (CMOS)-compatible platform. This architecture synergistically combines the SOI channel for efficient charge transport and signal amplification with the CQD layer serving a dual role as a broadband absorber (300–1700 nm) and a charge-trap medium. The device exhibits a responsivity of 639 A W–1 and specific detectivity exceeding 3 × 1012 Jones at 1550 nm, parallelly emulating short- and long-term plasticity, multilevel conductance tuning, and highly programmable synaptic dynamics. The top gate enables reversible potentiation and depression, and self-powered operation supports low-power sensing and light-driven learning. We demonstrate system-level utility in a synaptic array that achieves pattern recognition with peak accuracy exceeding 96%, establishing a pathway to silicon-integrated, energy-efficient neuromorphic vision.