Accurate thermal cycle measurement is essential for estimating the lifetime of power modules, particularly those employing SiC MOSFETs characterized by extremely low thermal capacitance. This work presents a rigorous method for estimating the die temperature variation of SiC components within power modules utilized in three-phase inverters. The approach leverages high-speed thermal imaging to accurately characterize the individual thermal impedance of each die. The resulting thermal impedance model is coupled with high-fidelity loss calculations to predict dynamic SiC die temperatures during inverter operation. Experimental results obtained under conditions representative of a 540 V / 7.5 kW aeronautical inverter demonstrate the model's accuracy in tracking dynamic SiC die temperature variations.
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Silva et al. (2026) studied this question.
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