Unveiling Search‐Robust One‐Shot Learning Operation in FeTFT‐Based Ternary Content‐Addressable Memory

With the rapid growth of data‐centric artificial intelligence (AI), ternary content‐addressable memory (TCAM) has emerged as a promising platform for parallel in‐memory search. Here, we systematically investigate how the gate‐dielectric material and structural design of metal–ferroelectric‐metal–insulator–semiconductor (MFMIS) ferroelectric thin‐film transistors (FeTFTs) affect TCAM search operation and long‐term robustness. By comparing ZrO 2 (11 nm), ZrO 2 (8 nm), and HfO 2 (8 nm) gate dielectrics, we decouple the effects of material substitution, thickness scaling, and equivalent‐oxide‐thickness (EOT)‐matched behavior. All devices show proper initial TCAM operation, with ZrO 2 8 nm exhibiting the highest initial sensing performance owing to its larger read current. Under repeated search cycling, however, ZrO 2 11 nm proves the most robust, while HfO 2 8 nm suffers the most severe degradation—governed by competition between electron trapping and donor‐like state creation rather than conventional ferroelectric fatigue. One‐shot classification simulations using experimentally extracted bit error rate (BER) trends confirm that device‐level degradation directly translates into accuracy loss, with ZrO 2 11 nm retaining the highest accuracy. Increasing the memcapacitor area ratio enlarges the memory window but degrades sensing response due to added parasitic capacitance and RC delay. These findings establish gate‐dielectric and interface design guidelines for search‐robust FeTFT‐based TCAM.