Symmetric Phase-Engineered Hf 1-x Zr x O 2 Enabling Reliable Non-Destructive Memory Readout

In response to the new requirements for memory in the era of big data, artificial intelligence, and the Internet of Things, the issue of destructive readout has become particularly critical for ferroelectric memories. In this work, by precisely controlling the atomic doping ratio, we tailored the crystalline phase of hafnium zirconate (HZO) thin films to stabilize an antiferroelectric-like state. Remarkably, this optimized phase configuration enabled a record high dielectric memory window (CMWεr) ~11.4 at 0 V. Under low voltage pulses (±1.2 V), two types of electric domains with different sensitivity to voltage are formed, and this property can be utilized to achieve the charge-based non-destructive readout (NDRO) of ferroelectric capacitor memories. Furthermore, owing to the symmetric device structure and low operating voltage, the switching endurance of the FeCAP can exceed 1011cycles. The findings of this study provide insights into developing highly reliable, NDRO and low power hafnium-based ferroelectric memory.