Epitaxial Growth and Electronic Structure Studies of Monolayer GdTe3 Thin Film

The quasi-two-dimensional van der Waals material GdTe3 serves as a prototypical platform for studying the intricate interactions between charge density waves and antiferromagnetic, high-mobility transport. In this work, we achieve the molecular beam epitaxial growth of monolayer GdTe3 thin film on epitaxial graphene grown on the Si-terminated surface of SiC(0001) substrates. Using in situ reflection high-energy electron diffraction and scanning tunneling microscopy, we confirm a flat, step-flow growth mode of the GdTe3 film. The X-ray photoelectron spectroscopy and low-temperature ARPES measurements reveal the electronic structure properties of GdTe3, especially the Fermi surface topology and energy band dispersions, resolving the presence of multiple rotationally twisted domains.