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We report a multi-cross micro-Hall sensor fabricated from an MBE-grown GaAs/AlGaAs heterostructure for high-sensitivity magnetometry. The device enables dc magnetization measurements at temperatures down to ∼15 mK and in dc magnetic fields up to 30 T. Bulk samples with dimensions ranging from 100 μ m to 1 mm can be measured with a resolution better than 1 μ T with a 1 μ A excitation at 13.77 Hz. Test-of-performance measurements were carried out by probing the field-dependent magnetization plateaus of the triangular-lattice quantum magnet K 2 Co 2 (SeO 3 ) 3 at 20 mK, the antiferromagnetic transition of K 3 GdTe 2 O 9 near 220 mK via temperature-dependent magnetization, and the quantum oscillations in a ruthenium single crystal. A simple and reliable sample-mounting setup that ensures reproducible magnetic measurements is provided.
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Tong et al. (2026) studied this question.
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