Comprehensive TCAD Study of Single-Event Effects in InP HEMTs Under ON-State and RF Operation

InP HEMTs used in higher-frequency spaceborne communication systems are vulnerable to radiation-induced single-event effects, particularly single-event transients and single-event upsets (SEUs). In this work, the single-event effects of InP HEMTs under ON-state and RF operation are systematically investigated using TCAD mixed-mode simulations. The influences of heavy-ion strike position, incident angle, and linear energy transfer on transient drain current responses are comprehensively analyzed. The results indicate that the gate–drain access region is the most sensitive location under ON-state bias due to enhanced charge collection by the drain electric field. In addition, the overlap between the ion track and the space-charge region beneath the gate strongly affects the transient current rise time. A X-band low-noise amplifier based on InP HEMTs is further constructed to evaluate SEUs behavior during 2ASK RF transmission. Statistical analysis under the adopted simulation conditions shows that the SEU probability exhibits a Weibull-type dependence on LET. The same Weibull-type dependence is preserved when the SET amplitude is scaled. These findings provide important insights into the radiation-response mechanisms of InP-based RF front-end circuits and offer valuable guidance for the radiation-hardening design of future spaceborne communication systems.