A TiN digital stepwise etch process is reported that could significantly simplify the monolithic Complementary Field Effect Transistor (mCFET) flow within the Replacement Metal Gate (RMG) Module. The process consists of repeated cycles of controlled TiN oxidation followed by selective oxide dissolution step. Various chemistries were screened for enabling controlled and selective TiN recess. Furthermore, we demonstrate that TiN cyclic etch does not damage the seam in between the nanoSheet (NS) in the CFET patterned structures.
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Arslanova et al. (2026) studied this question.
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