High‐Efficiency Laser‐Assisted Manufacturing of Silicon Carbide Wafers and Components: A Critical Review

Silicon carbide (SiC) and its composite variants are gaining significant traction in the semiconductor and aerospace sectors, owing to their outstanding mechanical strength, large bandgap, excellent thermal resilience, and strong resistance to radiation. However, these same properties make SiC extremely difficult to process using conventional machining techniques, which often result in low material removal efficiency, severe subsurface damage, and excessive tool wear. These challenges significantly restrict high‐precision and high‐throughput manufacturing of SiC components. Laser‐assisted machining (LAM) is a hybrid processing technique that has gained prominence for its ability to exploit laser–material interactions to alter the local mechanical and chemical characteristics of SiC, either before or during subsequent machining operations. By inducing controlled thermal, photochemical, or non‐thermal modification layers, LAM enables reduced machining forces, enhanced machinability, improved surface integrity, and extended tool life. This paper provides a comprehensive overview of recent advancements in laser‐assisted machining of SiC, emphasizing the underlying interaction phenomena, correlations between processing parameters and performance outcomes, and optimization approaches across various laser operating regimes. The study focuses on three primary dimensions: (i) evaluating and contrasting the interaction mechanisms between lasers and SiC under continuous‐wave, nanosecond, and ultrafast irradiation modes; (ii) examining how crystallographic orientation and laser processing conditions influence the formation of laser‐induced features and their subsequent impact on machining behavior; and (iii) assessing both quantitatively and qualitatively how laser‐assisted approaches perform relative to traditional machining techniques. Based on these insights, reported laser‐assisted processing routes are discussed. This review underscores laser‐assisted machining as an effective route for enabling efficient, damage‐minimized, and scalable processing of SiC, while also outlining the existing limitations and key areas that require further investigation for successful industrial adoption.