We present a 1×13 channel silicon nitride arrayed waveguide grating (AWG) fabricated on a 300 mm silicon photonics platform. The device operates across the C and L bands (1500-1620 nm) with a measured insertion loss of 0.92 dB and a crosstalk of-37.5 dB (median across 29 dies on the wafer). Each channel exhibits a 3 dB bandwidth of 118.6 GHz, with a channel spacing of 187 GHz. The free spectral range (FSR) of the AWG is 20 nm. The device footprint is compact, measuring 1.65 mm × 0.75 mm. Fabrication was carried out using AIM Photonics' 300 mm CMOS-compatible process at the Albany Nanotech Complex. This work presents the design, fabrication, and characterization of the AWG, including an analysis of die-to-die performance variations.
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Hossain et al. (2026) studied this question.
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