A Review on Spintronic Materials for Quantum Technologies: Materials, Quantum Phenomena, Device Architectures, and Future Prospects.

The rapid development of quantum technologies has created a need for materials that can simultaneously provide efficient control of spin, low dissipation, long coherence, strong spin–orbit coupling, and compatibility with scalable device architectures. Spintronics, which exploits the electron-spin degree of freedom in addition to its charge, provides a natural materials platform for addressing several of these requirements. This paper reviews the role of spintronic materials in emerging quantum technologies, with particular emphasis on ferromagnetic and ferri-magnetic materials, half-metallic Heusler compounds, magnetic insulators, heavy metals, topological insulators, anti-ferromagnets, two-dimensional van der Waals magnets, quantum spin defects, and hybrid hetero-structures. Representative materials including yttrium iron garnet (Y3Fe5O12), CoFeB, Ni81Fe19, Co2MnSi, Pt, W, Ta, Bi2Se3, WTe2, CrI3, Cr2Ge2Te6, Fe3GeTe2, MnBi2Te4, and diamond containing nitrogen-vacancy centers are discussed. Particular attention is given to material parameters such as Curie or Néel temperature, Gilbert damping, saturation magnetization, spin polarization, spin-diffusion length, spin–orbit coupling, magnetic anisotropy, and quantum coherence time. The paper further examines how spintronic materials can contribute to quantum sensing, quantum information processing, quantum communication, magnonic quantum systems, topological quantum devices, and hybrid quantum architectures. Yttrium iron garnet is particularly important because of its exceptionally low magnetic damping and its ability to support long-lived magnon excitations, while diamond nitrogen-vacancy centers provide an important example of a solid-state spin system capable of quantum sensing at room temperature. Topological and two-dimensional magnetic materials provide additional opportunities for engineering spin-momentum locking, Berry-curvature effects, magnetic order, and electrically controlled quantum states. Despite substantial progress, challenges associated with material defects, thermal stability, interface disorder, decoherence, scalability, and integration with conventional semiconductor technology is still remained. Future progress is expected to depend on interface engineering, isotope control, two-dimensional hetero-structures, artificial intelligence-assisted materials discovery, and integration of spintronic and quantum functionalities into multifunctional architectures.