MXene‐Based Photodetectors: Progress and Prospects

MXenes, a novel class of 2D transition metal carbides, carbonitrides, and nitrides derived from layered MAX phases, have attracted considerable attention for future photodetector applications due to their unique structural, optical, and electronic properties. Their tunable surface terminations (–O, –OH, –F) and metallic conductivity enable precise modulation of work function and carrier dynamics, facilitating efficient charge transfer and reduced dark current when integrated into semiconductor junctions. This review systematically explores the impact of various synthesis methods, such as HF, in situ HF, electrochemical, and alkali‐assisted etching, on MXene morphology, surface chemistry, and interfacial quality, which are critical for device performance. Key material properties relevant to photodetection, including optical transparency, high carrier mobility, tunable plasmonic response, and adjustable work function, are thoroughly examined. Furthermore, the review underscores MXene role in diverse photodetector designs, highlighting its application as an electrode, charge transport, and active‐layer material. By correlating synthesis techniques with intrinsic properties and device performance, this review provides a comprehensive understanding of how MXene engineering can enhance responsivity, detectivity, and spectral range in optoelectronic systems. Finally, it addresses the current challenges and future opportunities for optimizing MXene‐based materials for high‐performance, broadband, and flexible photodetectors.