Probing the Nitrogen Deficiency in Gallium Nitride by71Ga Magic-Angle Spinning NMR Spectroscopy

Ga MAS NMR One of Group III-V nitrides, gallium nitride (GaN) with abandgap of 3.4 eV at room temperature and its alloys withother Group III-V nitrides, aluminum nitride (AlN) with abandgap of 6.2 eV and indium nitride (InN) with a bandgapof 1.9 eV, are candidate materials for light emitting diodeshaving engineered bandgaps with energies from the visibleto the deep UV region.