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Materials showing reversible resistance switching at room temperature are attractive for today’s semiconductor technology with its wide interest in nonvolatile random access memories. In this letter, the retention behavior of the electric-pulse-induced reversible (EPIR) resistance change effect in Ag–La0.7Ca0.3MnO3–Pt sandwiches was demonstrated. The results suggest that the retention property of the EPIR materials depends on both the resistance states and the resistance switching history, and it can be modified using the proper modes of applied electric pulse.
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Dong et al. (2005) studied this question.
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