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Direct metallisation of epoxy moulding compound (EMC) requires conductive seed coatings that resist detachment. Cu and Ni were deposited on cured HS711 EMC by direct-current magnetron sputtering at programmed quartz-monitor endpoints of 50 and 100 nm; a rate-endpoint audit distinguished these specimens from 60 s screening runs. X-ray diffraction supported face-centred-cubic phase assignments. Three-position four-point-probe measurements yielded mean sheet resistances of 1062 and 696 mΩ sq−¹ for 50 and 100 nm Cu, versus 6116 and 3637 mΩ sq−¹ for Ni. Doubling the endpoint increased sheet conductance by 52.6% for Cu and 68.2% for Ni, below the ideal 100%. Tests on four independently prepared specimens per condition showed apparent detachment stress increased from 0.742 ± 0.048 to 1.208 ± 0.116 MPa for Cu and from 1.310 ± 0.017 to 1.670 ± 0.014 MPa for Ni; all comparisons remained significant after Holm adjustment. The results reveal a trade-off between lower sheet resistance for Cu and higher apparent detachment stress for Ni-seeded stacks. Because geometric thickness, interfacial structure and fracture locus were not independently resolved, this study establishes a screening framework rather than a bonding mechanism or reliability qualification.
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Chan et al. (2026) studied this question.
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