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This review provides a device-oriented, mechanism-based framework for understanding how two-dimensional Moiré superlattices can be engineered toward full-infrared photodetection from the NIR to the THz regime. This review evaluates the use of twist-angle-tunable two-dimensional Moiré superlattices as a platform for quantum cascade systems. In contrast to conventional III–V multi-quantum-well technologies that rely on fixed energy states, the Moiré-based approach provides a versatile alternative by utilizing Moiré-induced electronic states to enable tunable bandgap engineering. This study presents a comprehensive evaluation of four primary mechanisms that enable full-spectrum detection from the near-infrared to the THz range: direct injection, hot-electron emission, plasmonic oscillation, and quantum cascade processes. By integrating these physical mechanisms, we propose a silicon-compatible, all-infrared detection strategy that overcomes the material constraints associated with conventional semiconductor-based systems. Finally, this review identifies the key technical challenges that must be addressed for practical implementation, including the precise control of the twist angle, scalable large-area fabrication, and improved interfacial quality. Future progress is discussed through several promising approaches, including strain engineering, remote Coulomb modulation, and machine-learning-assisted structural design. These strategies provide a forward-looking roadmap for the development of next-generation high-performance infrared optoelectronic devices.
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Li et al. (2026) studied this question.
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