Electrically Reconfigurable Nonlinear Planar Hall Effect in Centrosymmetric Dirac Semimetal SrIrO 3 at Room Temperature

Spin‐charge interconversion mediated by spin‐orbit interaction represents a central concept in modern spintronics. The efficiency of spin‐charge interconversion is conventionally estimated from the Berry curvature of Bloch states within the linear‐response regime. Besides the linear regime, recent studies have uncovered nonlinear spin‐charge conversion arising from higher‐order electric‐field terms in noncentrosymmetric materials with nontrivial spin textures. Hence, harnessing and controlling such nonlinear responses promise opportunities for designable and reconfigurable nonlinear spintronic devices. Here, we report the nonlinear planar Hall effect in topological semimetal SrIrO 3 (001) thin film, enabled by inversion‐symmetry breaking at the interface. Furthermore, systematic transport measurements reveal robust second‐order electrical transport that can be dynamically and reversibly tuned by ionic‐liquid gating. This tunability originates from gating‐induced structural reconstruction, valence‐state modulation, and oxygen‐vacancy formation, which modify the interfacial inversion‐symmetry breaking and consequently reshape the band structure. These findings establish an effective electrical route for controlling nonlinear planar Hall responses through ionic engineering of spin texture in momentum space and provide a promising platform for reconfigurable nonlinear spintronic applications.