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Conventional thermal emitters obey Kirchhoff's law of thermal radiation, which requires emissivity and absorptivity to be equal at each wavelength, angle, and polarization. This in turn places a fundamental limit on a range of radiative energy technologies as well as heat transfer. This constraint can however be overcome using magneto-optic semiconductors, which break Lorentz reciprocity under an applied magnetic field. However, in most prior experimental demonstrations, nonreciprocity has been restricted to TM polarization, since the electric field of TE-polarized light is parallel to the applied magnetic field. Here, we experimentally demonstrate nonreciprocal absorption in both polarizations at the same wavelengths and angles from a single structure, wherein a germanium Mie-resonant metasurface on a doped InAs layer scatters TE-polarized light into near fields with components perpendicular to the magnetic field, allowing the magneto-optic response of the InAs to act on them. Under a 0.48 T field from a permanent Halbach array, this structure exhibits a difference in absorptivity between $+B$ and $-B$ of 0.035 in both TE and TM polarization at 16.6 $μ$m. Our approach shows that the magneto-optic response of a planar semiconductor and the resonances of a dielectric metasurface can be designed together, offering a potential route to dual-polarization nonreciprocity at fields available from permanent magnets for emerging energy and heat transfer technologies.
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Christiansen et al. (2026) studied this question.
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