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Linear arrays of CaF2 stripes and dots, about 7 nm wide, are fabricated by self-assembly on stepped Si(111). Stripes are grown on a CaF1 passivation layer, dots directly on Si. The stripes have a precision of ±1 nm, are continuous, do not touch each other, and are attached to the top of the step edges. The stripe repulsion and their counter-intuitive attachment are explained via a reversal of the stacking at the CaF2/Si(111) interface. The dot density is 3×1011 cm−2=2 Teradots/in.2. These arrays may serve as masks in nanolithography.
Viernow et al. (Mon,) studied this question.